D5072_ View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D5072_

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

KSD5072

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

ICBO

Collector Cutoff Current

VCB= 800V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 4V ; IC= 0

hFE

DC Current Gain

IC= 1A ; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 10V

VECF

C-E Diode Forward Voltage

tf

Fall Time

IF= 5A

IC= 4A , IB1= 0.8A ; IB2= -1.6A

RL= 50Ω; VCC= 200V

MIN TYP. MAX UNIT

5.0

V

1.5

V

10 μA

40

200 mA

8

3

MHz

2.0

V

0.4 μs

isc website：www.iscsemi.cn

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