MJ15003 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MJ15003 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ15003
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0
140
V
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
1.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=2V
2.0
V
ICEO
Collector cut-off current
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
VCE=140V; IB=0
VCE=140V; VBE(off)=1.5V
TC=150℃
VEB=5V; IC=0
0.25 mA
0.1
2.0
mA
0.1 mA
hFE
DC current gain
IC=5A ; VCE=2V
25
150
VCE=50Vdc,t=1 s, Nonrepetitive
5
Is/b
Second breakdown collector current
With base forward biased
A
VCE=100Vdc,t=1 s, Nonrepetitive
1
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
1000 pF
fT
Transition frequency
IC=0.5A ; VCE=10V;f=0.5MHz
2
MHz
2
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