MJ15003 View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
Manufacturer
MJ15003 Datasheet PDF : 4 Pages
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SEMICONDUCTOR
MJ15003(NPN)
MJ15004(PNP) RRooHHSS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
ICEX
Collector cutoff current
VCE = 140V, VBE(off) = 1.5V
VCE = 140V, VBE(off) = 1.5V, TC = 150°C
ICEO
Collector cutoff current
VCE = 140V, lB = 0
IEBO
Emitter cutoff current
VEBO = 5V, lC = 0
VCEO(SUS)* Collector to emitter sustaining voltage
lC = 200mA, lB = 0
140
VCBO
Collector to base voltage
lE = 0
140
VEBO
Emitter to base voltage
lC = 0
5
hFE
Forward current transfer ratio (DC current gain) lC = 5A, VCE = 2V
25
VCE(sat)* Collector to emitter saturation voltage
lC = 5A, lB = 0.5A
VBE(on)* Base to emitter on voltage
lC = 5A, VCE = 2V
Transition frequency
fT
(current gain - bandwidth product )
lC = 0.5A, VCE = 10V, ftest = 0.5MHZ
2.0
MAX
100
2.0
250
100
150
1.0
2.0
µA
mA
µA
V
V
MHZ
Cob
Output capacitance
VCB = 10V, IE = 0, ftest = 1MHz
VCE = 50V, t = 1s, non-repetitive
Second breakdown collector current with base
ls/b*
forward baised
VCE = 100V, t = 1s, non-repetitive
*Pulsed : Pulse duration = 300 µs, duty cycle 2%.
*For PNP types voltage and current values are negative.
1000 pF
5
A
1
Fig.1 Power derating
400
350
300
250
200
150
100
50
0
0
25 50 75 100 125 150 175 200
TC, Case temperature (°C)
www.nellsemi.com
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