MJ15003 View Datasheet(PDF) - Nell Semiconductor Co., Ltd
Part Name
Description
Manufacturer
MJ15003 Datasheet PDF : 4 Pages
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SEMICONDUCTOR
MJ15003(NPN)
MJ15004(PNP) RRooHHSS
Nell High Power Products
Fig.2 Active region safe operating area
20
15
10
7
5
3
2
1
0.7
0.5
0.3
0.2
23
TC = 25°C
TJ = 200°C
Bonding wire limited
Thermal limitation (single pulse)
Second breakdown limited
curves apply below rated VCEO
5 7 10
20 30 50 70 100 150 200
VCE, Collector-emitter voltage (V)
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate lC-VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of fig.2 is based on TJ(pk) = 200°C; TC is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
Fig.3 DC Current gain
MJ15003(NPN)
500
300
TJ = 100°C
200
VCE = 2.0V
100
70
TJ = 25°C
50
30
20
10
7
5
0.2 0.3 0.5
1
2
5 7 10
20
lC, Collector current (Amp)
300
200
TJ = 100°C
100
TJ = 25°C
70
50
MJ15004(PNP)
VCE = 2.0V
20
10
7
5
0.2 0.3 0.5
1
2
5 7 10
20
lC, Collector current (Amp)
Fig.4 “ON” Characteristics
MJ15003(NPN)
MJ15004(PNP)
2.0
2.0
1.6
1.6
1.2
VBE @ VCE = 2V
0.8
TJ = 25°C
TJ = 100°C
0.4
TJ = 100°C
VCE(sat) @ lC /lB = 10
TJ = 25°C
0
0.2 0.3 0.5
1
2
5 7 10
20
1.2
VBE @ VCE = 2V
0.8
TJ = 25°C
0.4
TJ = 100°C
VCE(sat) @ lC /lB = 10
0
0.2 0.3 0.5
1
2
TJ = 100°C
TJ = 25°C
5 7 10
20
Collector current, lC (Amp)
Collector current, lC (Amp)
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