BSP40 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
BSP40 Datasheet PDF : 4 Pages
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BSP40/41/42/43
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
Rthj-tab • Thermal Resistance Junction-Collecor Tab
• Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm
Max
Max
62.5
8
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V Tj = 150 oC
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
IC = 100 µA
for BSP40/BSP41
for BSP42/BSP43
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 10 mA
for BSP40/BSP41
for BSP42/BSP43
V(BR)CES Collector-Emitter
Breakdown Voltage
(VBE = 0)
IC = 10 µA
for BSP40/BSP41
for BSP42/BSP43
V(BR)EBO
VCE(sat)∗
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IC = 10 µA
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
hFE∗ DC Current Gain
for BSP40/BSP41
IC = 100 µA VCE = 5 V
IC = 100 mA VCE = 5 V
IC = 500 mA VCE = 5 V
for BSP42/BSP43
IC = 100 µA VCE = 5 V
IC = 100 mA VCE = 5 V
IC = 500 mA VCE = 5 V
fT
Transition Frequency IC = 50 mA VCE = 10 V f = 35 MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V f = 1 MHz
ton
Turn-on Time
IC = 100 mA IB1 = -IB2 = 5 mA
toff
Turn-on Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
70
90
60
80
70
90
5
10
40
30
30
100
50
100
Typ.
Max.
100
50
0.25
0.5
1
1.2
120
300
20
90
250
1000
Unit
nA
µA
V
V
V
V
V
V
V
V
V
V
V
MHz
pF
pF
ns
ns
2/4
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