LBC856BWT1 View Datasheet(PDF) - Leshan Radio Company
Part Name
Description
Manufacturer
LBC856BWT1 Datasheet PDF : 6 Pages
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
These transistors are designed for general purpose
amplifier applications. They are housed in the SOT–323/
SC–70 which is designed for low power surface mount
applications.
Features
Pb– Free Package May be Available. The G.Suffix Denotes a
Pb– Free Lead Finish
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
BC856
–65
–80
–5.0
–100
BC857
–45
–50
–5.0
–100
BC858
–30
–30
–5.0
–100
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
T J , T stg
Max
Unit
150
mW
833
–55 to +150
°C/W
°C
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F;
LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
LBC856 Series
LBC857 Series
LBC858 Series
LBC856 Series
LBC857 Series
LBC858 Series
Collector–Base Breakdown Voltage
(IC = – 10 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Emitter–Base Breakdown Voltage
(IE = – 1.0 µA)
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (VCB = – 30 V)
(VCB = – 30 V, TA = 150°C)
1.FR–5=1.0 x 0.75 x 0.062in
– 65
—
V (BR)CEO
– 45
—
– 30
—
– 80
—
V (BR)CES
– 50
—
– 30
—
– 80
—
V (BR)CBO
– 50
—
– 30
—
– 5.0
—
V (BR)EBO
– 5.0
—
– 5.0
—
I CBO
—
—
—
—
LBC856AWT1, BWT1
LBC857AWT1, BWT1
LBC858AWT1, BWT1
CWT1
3
1
2
SOT– 323 / SC-70
1
BASE
3
COLLECTOR
2
EMITTER
Max Unit
—
—
v
—
—
—
v
—
—
—
v
—
—
—
v
—
– 15 nA
– 4.0 µA
K6–1/6
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