2SK996 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SK996 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK996
DESCRIPTION
·Drain Current –ID=4A@ TC=25℃
·Drain Source Voltage-
: VDSS=600V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE NIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
600
V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃
4
A
Total Dissipation@TC=25℃
50
W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance,Junction to Case
0.83
Thermal Resistance,Junction to Ambient 35
℃/W
℃/W
isc website：www.iscsemi.cn
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