2SA1964 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
2SA1964 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1964
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μ A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μ A; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
ICBO
Collector Cutoff Current
VCB= -160V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.1A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -0.2A; VCE= -10V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
MIN TYP. MAX UNIT
-160
V
-160
V
-5
V
-1.0
V
-1.0 μ A
-1.0 μ A
60
200
150
MHz
35
pF
hFE Classifications
D
E
60-120 100-200
isc website：www.iscsemi.cn
2 isc & iscsemi is registered trademark
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