2SA1964 View Datasheet(PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Part Name

Description

Manufacturer

2SA1964

Silicon PNP transistor in a TO-220F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1964

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

PC(TC=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

-160

-160

-5.0

-1.5

2.0

20

150

-55∼150

单位

Unit

V

V

V

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA IE=0

VCEO IC=-1.0mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=-50μA IC=0

Collector Cut-Off Current

ICBO VCB=-160V IE=0

Emitter Cut-Off Current

IEBO VEB=-4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector output capacitance

hFE VCE=-5.0V

VCE(sat)

fT

Cob

IC=-1.0A

VCE=-10V

f=100MHz

VCB=-10V

f=1.0MHz

IC=-0.1A

IB=-0.1A

IE=0.2A

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-160

V

-160

-5.0

60

V

V

-1.0 μA

-1.0 μA

200

-1.0 V

150

MHz

35

pF

http://www.fsbrec.com

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