BYG22AHE3/TR View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
BYG22AHE3/TR Datasheet PDF : 5 Pages
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www.vishay.com
100
VR = VRRM
10
1
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 3 - Reverse Current vs. Junction Temperature
50
VR = VRRM
40
30
PR - Limit
20
at 100 % VR
PR - Limit
10
at 80 % VR
0
25
50
75
100
125
150
Junction Temperature (°C)
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
70
f = 1 MHz
60
50
40
30
20
10
0
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
BYG22A, BYG22B, BYG22D
Vishay General Semiconductor
140
TA = 125 °C
120
TA = 100 °C
100
TA = 75 °C
80
60
TA = 50 °C
40
TA = 25 °C
20
0
0
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
60
50
40
30
20
10
0
0
TA = 125 °C
TA = 100 °C
TA = 75 °C
TA = 50 °C
TA = 25 °C
IR = 0.5 A, iR = 0.125 A
0.2
0.4
0.6
0.8
1.0
Forward Current (A)
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
1000
125 K/W DC
100 tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10 tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse
1
10-5
10-4
10-3
10-2
10-1
100
101
102
Pulse Length (s)
Fig. 8 - Thermal Response
Revision: 30-Oct-13
3
Document Number: 88959
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