2SK3289
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
VDSS
30
Gate to source voltage
VGSS
±20
Drain current
ID
300
Drain peak current
I Note1
D(pulse)
1.2
Body-drain diode reverse drain current IDR
300
Channel dissipation
Pch Note 2
300
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Unit
V
V
mA
A
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown V(BR)DSS 30
voltage
Gate to source breakdown V(BR)GSS ±20
voltage
Gate to source leak current IGSS
—
Zero gate voltege drain
I DSS
—
current
Gate to source cutoff voltage VGS(off)
1.3
Static drain to source on state RDS(on)
—
resistance
RDS(on)
—
Forward transfer admittance |yfs|
145
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance Crss
—
Turn-on delay time
t d(on)
—
Rise time
tr
—
Turn-off delay time
t d(off)
—
Fall time
tf
—
Note: 3. Pulse test
4. Marking is AN
See characteristics curves of 2SK3287
Typ
—
—
—
—
—
1.26
2.8
220
6
18
2
200
600
1100
1100
Max
—
—
±5
1
2.3
3.44
3.44
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Test Conditions
ID = 100 µA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 10µA, VDS = 5 V
ID = 150 mA,VGS = 10 V Note 3
ID = 50 mA,VGS = 4 V Note 3
ID = 150 mA, VDS =10 V Note 3
VDS = 10 V
VGS = 0
f = 1 MHz
ID = 150 mA, VGS = 10 V
RL = 66.6 Ω
2