2SC1623 View Datasheet(PDF) - Bruckewell Technology LTD
Part Name
Description
Manufacturer
2SC1623 Datasheet PDF : 4 Pages
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2SC1623
Silicon PNP Epitaxial Type Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATING @ Ta=25°C unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
100
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55 to +150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
V(BR)CBO
Collector-base breakdown voltage
IC = 100μA , IE = 0
V(BR)CEO
Collector-emitter breakdown
voltage
IC = 1mA , IB = 0
V(BR)EBO
Emitter-base breakdown voltage
IE = 100μA , IC = 0
ICBO
Collector cut-off current
VCB = 60 V , IE = 0
IEBO
Emitter cut-off current
VEB = 5 V , IC = 0
hFE
DC current gain
VCE = 6 V , IC = 1 mA
VCE(sat)
Collector-emitter saturation voltage IC = 100mA , IB = 10mA
VBE(sat)
Base-emitter saturation voltage
IC = 100mA , IB = 10mA
VBE
Base Emitter Voltage
VCE = 6 V , IC = 1 mA
fT
Transition frequency
VCE = 6 V , IE = -10 mA
Cob
Output capacitance
VCB = 6 V , IE = 0
f = 1.0MHz
MIN TYP MAX UNIT
60
V
50
V
5
V
uA
uA
90 200 600
0.15 0.3
V
0.86 1.0
V
0.55 0.62 0.65 V
250
MHz
3.0
pF
CLASSIFICATION OF hFE(1)
Rank
L4
Range
90-180
Marking
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7
Publication Order Number: [2SC1623]
© Bruckewell Technology Corporation Rev. A -2014
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