MPSA43 View Datasheet(PDF) - Motorola => Freescale
Part Name
Description
Manufacturer
MPSA43 Datasheet PDF : 4 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPSA42/D
High Voltage Transistors
NPN Silicon
COLLECTOR
3
MPSA42 *
MPSA43
*Motorola Preferred Device
2
BASE
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol MPSA42 MPSA43 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
300
200
300
200
6.0
6.0
500
625
5.0
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
PD
Derate above 25°C
1.5
Watts
12
mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/mW
°C/mW
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSA42
MPSA43
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPSA42
MPSA43
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
(VCB = 160 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
(VEB = 4.0 Vdc, IC = 0)
v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
MPSA42
MPSA43
MPSA42
MPSA43
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Min
Max
Unit
Vdc
300
—
200
—
Vdc
300
—
200
—
6.0
—
Vdc
µAdc
—
0.1
—
0.1
µAdc
—
0.1
—
0.1
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
© Motorola, Inc. 1996
Share Link: 