A1810 View Datasheet(PDF) - Hitachi -> Renesas Electronics
Part Name
Description
Manufacturer
A1810 Datasheet PDF : 6 Pages
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2SA1810
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
Ratings
Unit
–200
V
–200
V
–5
V
–0.2
A
–0.5
A
1.25
W
10
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown V(BR)CBO –200 —
voltage
Collector to emitter breakdown V(BR)CEO –200 —
voltage
Emitter to base breakdown
V(BR)EBO
–5
—
voltage
Collector cutoff current
I CBO
—
—
DC current transfer ratio
hFE*1
60
—
Base to emitter voltage
VBE
—
—
Collector to emitter saturation VCE(sat)
—
—
voltage
Gain bandwidth product
fT
Collector output capacitance Cob
200 300
—
5.0
Note: 1. The 2SA1810 is grouped by hFE as follows.
Max Unit Test conditions
—
V
IC = –10 µA, IE = 0
—
V
IC = –1 mA, RBE = ∞
—
V
IE = –10 µA, IC = 0
–10 µA
200
–1.0 V
–1.0 V
VCB = –160 V, IE = 0
VCE = –5 V, IC = –10 mA
VCE = –5 V, IC = –30 mA
IC = –30 mA, IB = –3 mA
—
MHz VCE = –20 V, IC = –30 mA
—
pF
VCB = –30 V, IE = 0, f = 1 MHz
B
60 to 120
C
100 to 200
2
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