LH28F008SC-L120 View Datasheet(PDF) - Sharp Electronics

Part Name

Description

Manufacturer

LH28F008SC-L120

Flash Memory 8M (1MB × 8)

Sharp Electronics 

sharp

LHF08CH1

3

1 INTRODUCTION

This datasheet contains LH28F008SCT-L85

specifications. Section 1 provides a flash memory

overview. Sections 2, 3, 4, and 5 describe the

memory organization and functionality. Section 6

covers electrical specifications. LH28F008SCT-L85

Flash memory documentation also includes

application notes and design tools which are

referenced in Section 7.

1.1 New Features

The LH28F008SCT-L85 SmartVoltage Flash memory

maintains backwards-compatibility with SHARP’s

28F008SA. Key enhancements over the 28F008SA

include:

•SmartVoltage Technology

•Enhanced Suspend Capabilities

•In-System Block Locking

Both devices share a compatible pinout, status

register, and software command set. These

similarities enable a clean upgrade from the

28F008SA to LH28F008SCT-L85. When upgrading, it

is important to note the following differences:

•Because of new feature support, the two devices

have different device codes. This allows for

software optimization.

•VPPLK has been lowered from 6.5V to 1.5V to

support 3.3V and 5V block erase, byte write, and

lock-bit configuration operations. The VPP voltage

transitions to GND is recommended for designs

that switch VPP off during read operation.

•To take advantage of SmartVoltage technology,

allow VPP connection to 3.3V or 5V.

1.2 Product Overview

The LH28F008SCT-L85 is a high-performance 8M-bit

SmartVoltage Flash memory organized as 1M-byte of

8 bits. The 1M-byte of data is arranged in sixteen

64K-byte blocks which are individually erasable,

lockable, and unlockable in-system. The memory

map is shown in Figure 3.

SmartVoltage technology provides a choice of VCC

and VPP combinations, as shown in Table 1, to meet

system performance and power expectations. 2.7V

VCC consumes approximately one-fifth the power of

5V VCC. But, 5V VCC provides the highest read

performance. VPP at 3.3V and 5V eliminates the need

for a separate 12V converter, while VPP=12V

maximizes block erase and byte write performance.

In addition to flexible erase and program voltages,

the dedicated VPP pin gives complete data protection

when VPP≤VPPLK.

Table 1. VCC and VPP Voltage Combinations

Offered by SmartVoltage Technology

VCC Voltage

2.7V(1)

VPP Voltage



3.3V

3.3V, 5V, 12V

5V

5V, 12V

NOTE:

1. Block erase, byte write and lock-bit configuration

operations with VCC<3.0V are not supported.

Internal VCC and VPP detection Circuitry

automatically configures the device for optimized

read and write operations.

A Command User Interface (CUI) serves as the

interface between the system processor and internal

operation of the device. A valid command sequence

written to the CUI initiates device automation. An

internal Write State Machine (WSM) automatically

executes the algorithms and timings necessary for

block erase, byte write, and lock-bit configuration

operations.

A block erase operation erases one of the device’s

64K-byte blocks typically within 0.3s (5V VCC, 12V

VPP) independent of other blocks. Each block can be

independently erased 100,000 times (1.6 million

block erases per device). Block erase suspend mode

allows system software to suspend block erase to

read or write data from any other block.

Writing memory data is performed in byte increments

typically within 6µs (5V VCC, 12V VPP). Byte write

suspend mode enables the system to read data or

execute code from any other flash memory array

location.

Rev. 1.3

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