IRFP264PBF(2011) View Datasheet(PDF) - Vishay Semiconductors
Part Name
Description
Manufacturer
IRFP264PBF Datasheet PDF : 9 Pages
| |||
IRFP264, SiHFP264
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.24
-
MAX.
40
-
0.45
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 23 Ab
VDS = 50 V, ID = 23 Ab
250
-
-
V
-
0.37
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.075 Ω
20
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = 25 V,
-
f = 1.0 MHz, see fig. 5
-
-
VGS = 10 V
ID = 38 A, VDS = 200 V,
see fig. 6 and 13b
-
-
-
VDD = 125 V, ID = 38 A ,
-
Rg = 4.3 Ω, RD = 3.2 Ω, see fig. 10b
-
-
5400
-
870
-
pF
150
-
-
210
-
35
nC
-
98
22
-
99
-
ns
110
-
92
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
5.0
-
nH
-
13
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
-
-
38
A
-
-
150
Body Diode Voltage
VSD
TJ = 25 °C, IS = 38 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
410
620
ns
TJ = 25 °C, IF = 38 A, dI/dt = 100 A/μsb
Qrr
-
5.7
8.6
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com
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Document Number: 91217
S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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