BC337 View Datasheet(PDF) - Infineon Technologies

Part Name

Description

Manufacturer

BC337

NPN Silicon AF Transistors

Infineon Technologies 

BC 337

BC 338

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V

IC = 10 mA

BC 337

45

–

–

BC 338

25

–

–

Collector-base breakdown voltage

V(BR)CB0

IC = 100 µA

BC 337

50

–

–

BC 338

30

–

–

Emitter-base breakdown voltage

IE = 10 µA

V(BR)EB0 5

–

–

Collector cutoff current

VCB = 25 V

VCB = 45 V

VCB = 25 V, TA = 150 ˚C

VCB = 45 V, TA = 150 ˚C

ICB0

BC 338

–

–

100 nA

BC 337

–

–

100 nA

BC 338

–

–

10

µA

BC 337

–

–

10

µA

Emitter cutoff current

VEB = 4 V

IEB0

–

–

100 nA

DC current gain1)

hFE

IC = 100 mA; VCE = 1 V

BC 337/16; BC 338/16

BC 337/25; BC 338/25

BC 337/40; BC 338/40

IC = 300 mA; VCE = 1 V

BC 337/16; BC 338/16

BC 337/25; BC 338/25

BC 337/40; BC 338/40

–

100 160 250

160 250 400

250 350 630

60

–

–

100 –

–

170 –

–

Collector-emitter saturation voltage1)

IC = 500 mA; IB = 50 mA

VCEsat

–

–

0.7 V

Base-emitter saturation voltage

IC = 500 mA; IB = 50 mA

VBEsat

–

–

2

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group

3

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