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AG01Y View Datasheet(PDF) - Diode Semiconductor Korea

Part Name
Description
Manufacturer
AG01Y
DSK
Diode Semiconductor Korea DSK
AG01Y Datasheet PDF : 2 Pages
1 2
Diode Semiconductor Korea
AG01Y - - - AG01A
HIGH EFFICIENCY RECTIFIERS
VOLTAGE RANGE: 70--- 600 V
CURRENT: 0.5---1.0 A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High crrent capability
Eas ily cleaned with freon, alcohol, lsopropand
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-41, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting: Any
DO-41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
AG01Y AG01Z AG01
Maximum peak repetitive reverse voltage
VRRM 100
Maximum RMS voltage
VRMS
70
Maximum DC blocking voltage
Maximum average forw ard rectified current
v 9.5mm lead length, @TA=75
Peak forw ard surge current
VDC
100
IF(AV)
1.0
10ms single half-sine-w ave
IFSM
25
superimposed on rated load
@TJ=125
Maximum instantaneous forw ard voltage
@ IF=IF(AV)
Maximum reverse current @TA=25
at rated DC blocking voltage @TA=100
VF
1.2
IR
Maximum reverse recovery time (Note1)
trr
Typical junction capacitance
(Note2)
CJ
Typical thermal resistance
(Note3)
Operating junction temperature range
RθJC
TJ
Storage temperature range
TSTG
NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance junction to case.
200
400
140
280
200
400
0.7
15
1.8
100
500
50
20
22
- 55 ----- + 150
- 55 ----- + 150
AG01A UNITS
600
420
V
600
0.5
A
A
V
XA
ns
15
pF
/W
www.diode.kr

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