AG01Y View Datasheet(PDF) - Diode Semiconductor Korea
Part Name
Description
Manufacturer
AG01Y Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
GAG01Y - - - GAG01A
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUTIMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
20
10
AG01Y
1
AG01Z-AG01
AG01A
0.1
0.01
TJ=25
Pulse Width=300ns
0.001
0.4 0.8 1.2 1.6 2.0 2.4 2.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
1.5
1.2
AG01Y
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.9 AG01Z,AG01
0.6
AG01A
0.3
0
0
25
50
7 5 100 125 150
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT Z
30
25
20
15
10
TJ=25
5 8.3ms Single Half
S in e -W a ve
0
1
5
AG01Y
AG01Z--AG01A
10
50
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
AG01Y-AG01
20
10
4
TJ=25
2
1
0.1 0.2 0.4 1 2 4
AG01A
10 20 40 100
REVERSE VOLTAGE,VOLTS
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