BC847BRLT1 View Datasheet(PDF) - Leshan Radio Company,Ltd
Part Name
Description
Manufacturer
BC847BRLT1 Datasheet PDF : 3 Pages
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V EBO
7.0
V
Collector Current — Continuous I C
150
mAdc
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
T stg -55 ~+150 °C
DEVICE MARKING
BC847BRLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
50
7
60
—
—
—
120
—
—
h FE values are classified as follows:
*
Q
R
hFE
120~270
180~390
S
270~560
BC847BRLT1
is LRC prefered Device
3
1
2
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
Typ
Max Unit
—
—
V
—
—
V
—
—
V
—
0.1
µA
—
0.1
µA
—
0.4
V
––
560
––
180
––
MHz
2.0
3.5
pF
M36–1/3
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