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D10SC6MR View Datasheet(PDF) - Thinki Semiconductor Co., Ltd.

Part Name
Description
Manufacturer
D10SC6MR Datasheet PDF : 1 Pages
1
D10SC6MR
®
Pb Free Plating Product
D10SC6MR
Pb
10 Ampere,60 Volt Dual Common Anode Schottky Barrier Half Bridge Rectifier
Features
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
ITO-220AB
Unit:mm
Application
Switching power supply
DC/DC converter
Home Appliances, Office Equipment
Telecommunication
Mechanical Data
Case: Fully Isolated Molding TO-220F
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.1 gram approximately
TO-220F FullPak
Case
Case
Case
Case
Positive
Negative
Doubler
Reverse Doubler
Common Cathode Common Anode Tandem Polarity Tandem Polarity
Suffix "M"
Suffix "MR"
Suffix "MD"
Suffix "MS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
Maximum Reverse Voltage
VRM
Repetitive Peak Surge Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
Average Rectified Forward Current
Peak Surge Forward Current
IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=120℃
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃
Repetitive Peak Surge Reverse Power
PRRSM Pulse width 10μs, Rating of per diode, Tj= 25℃
Dielectric Strength
Vdis Terminals to case, AC 1 minute
Mounting Torque
TOR (Recommended torque:0.3N・m)
●Electrical Characteristics
Item
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
Tc=25℃
Symbol
Conditions
VF IF=5A, Pulse measurement, Rating of per diode
IR VR=VRM, Pulse measurement, Rating of per diode
Cj f=1MHz, VR=10V, Rating of per diode
θjc junction to case
θcf case to heatsink, Mounting torque=0.5N・m
Ratings Unit
-40〜150 ℃
150
60
V
65
V
10
A
100
A
330
W
1.5
kV
0.5 N・m
Ratings
Max.0.58
Max.4.5
Typ.200
Max.3.3
Max.1.5
Unit
V
mA
pF
℃/W
Rev.05
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/1
http://www.thinkisemi.com/

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