SMBYW01-200 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

SMBYW01-200

HIGH EFFICIENCY FAST RECOVERY DIODE

STMicroelectronics 

SMBYW01-200

THERMAL RESISTANCES

Symbol

Rth (j-l)

Junction to lead

Parameter

Value

13

Unit

°C/W

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Parameters

Test Conditions

Min. Typ. Max. Unit

) VF * Forward voltage drop

uct(s IR ** Reverse leakage current

Prod t(s) Pulse test : * tp = 380 µs, δ < 2 %

te c ** tp = 5 ms, δ < 2 %

Tj = 25°C

Tj = 150°C

Tj = 25°C

Tj = 125°C

IF = 1 A

IF = 1 A

VR = VRRM

0.9

V

0.65 0.71

3

µA

180 400

sole rodu To evaluate the maximum conduction losses use the following equation :

b P P = 0.58 x IF(AV) + 0.118 x IF2(RMS)

) - O lete RECOVERY CHARACTERISTICS

ct(s bso Symbol

Test Conditions

rodu - O trr

Tj = 25°C IF = 0.5 A Irr = 0.25 A IR = 1A

P t(s) IF = 1 A dIF/dt = - 50 A/µs VR = 30V

lete duc tfr

Tj = 25°C IF = 1A dIF/dt = 100 A/µs

OObbssoolete Pro VFP

Tj = 25°C IF = 1A dIF/dt = 100 A/µs

Min. Typ. Max. Unit

25 ns

25 35

25 ns

5

V

2/5

Share Link: