SMBYW01-200 View Datasheet(PDF) - STMicroelectronics
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Description
Manufacturer
SMBYW01-200 Datasheet PDF : 5 Pages
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SMBYW01-200
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values).
Fig. 8: Reverse recovery current versus dIF/dt .
C(pF)
12
10
8
F=1MHz
Tj=25°C
IRM(A)
6
IF=IF(av)
5 90% confidence
Tj=125°C
4
6
3
4
2
) 2
1
VR(V)
dIF/dt(A/µs)
t(s 0
0
1
10
100 200
0 20 40 60 80 100 120 140 160 180 200
Product(s) Fig. 9: Reverse recovery time versus dIF/dt.
Fig. 10: Reverse recovery charges versus dIF/dt.
lete duc trr(ns)
so ro 100
b P 90
IF=IF(av)
80
90% confidence
Tj=125°C
- O te 70
) le 60
t(s o 50
s 40
c b 30
u O 20
d - 10
dIF/dt(A/µs)
ro ) 0
P t(s 0 20 40 60 80 100 120 140 160 180 200
Qrr(nC)
100
90
IF=IF(av)
80
90% confidence
Tj=125°C
70
60
50
40
30
20
10
dIF/dt(A/µs)
0
0 20 40 60 80 100 120 140 160 180 200
lete duc Fig. 11: Dynamic parameters versus junction
bso Pro temperature.
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35µm)
O lete Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
so 1.25
Ob1.00
Rth(j-a) (°C/W)
120
100
80
IRM
0.75
60
Qrr
40
0.50
20
Tj(°C)
S(Cu) (cm²)
0.25
0
25
50
75
100 125 150
0
0
1
2
3
4
5
4/5
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