D1767 View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Part Name
Description
Manufacturer
D1767 Datasheet PDF : 4 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD1767 TRANSISTOR (NPN)
FEATURES
z High Breakdown Voltage and Current
z Excellent DC Current Gain Linearity
z Complement the 2SB1189
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
80
5
700
500
250
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ
V(BR)CBO IC=50µA,IE=0
80
V(BR)CEO IC=2mA,IB=0
80
V(BR)EBO IE=50µA,IC=0
5
ICBO
VCB=50V,IE=0
IEBO
VEB=4V,IC=0
hFE
VCE=3V, IC=100mA
82
VCE(sat) IC=500mA,IB=50mA
fT
VCE=10V,IC=50mA, f=100MHz
120
Cob
VCB=10V, IE=0, f=1MHz
10
Max
0.5
0.5
390
0.4
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
P
82–180
DCP
Q
120–270
DCQ
R
180–390
DCR
Unit
V
V
V
µA
µA
V
MHz
pF
www.cj-elec.com
1
C,Nov,2015
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