DATA SHEET
SEMICONDUCTOR
20A GLASS PASSIVATED
BRIDGE RECTIFIER
FEATURES
•Glass Passivated Die Construction
•High Case Dielectric Strength of 1500VRMS
•Low Reverse Leakage Current
•Surge Overload Rating to 240A Peak
•Ideal for Printed Circuit Board Applications
K
•Plastic Material - UL Flammability
Classification 94V-0
•UL Listed Under Recognized Component
Index, File Number E94661
J
•High temperature soldering : 260OC / 10 seconds at terminals H
•Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
I
MECHANICAL DATA
•Case: Molded Plastic
•Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
•Polarity: Molded on Body
•Mounting: Through Hole for #6 Screw
•Mounting Torque: 5.0 in-lbs Maximum
•Weight: 6.6 grams (approx)
•Marking: Type Number
GBJ20005 THRU GBJ2010
GBJ
Dim
Min
Max
A
29.70 30.30
L
B
19.70 20.30
A
M
C
17.00 18.00
D
3.80 4.20
B
_
S
N
D
P
C
R
E
7.30 7.70
G
9.80 10.20
H
2.00 2.40
I
0.90 1.10
J
2.30 2.70
K
3.0 X 45°
L
4.40 4.80
M
3.40 3.80
G EE
N
3.10 3.40
P
2.50 2.90
R
0.60 0.80
S
10.80 11.20
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
GBJ GBJ
20005 2001
GBJ
2002
GBJ
2004
GBJ
2006
GBJ
2008
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
50
100 200 400 600 800
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS) 35
70
140 280 420 560
Average Forward Rectified Output Current @ TC= 100℃
IO
20
Non-Repetitive Peak Forward Surge Current, 8.3 ms single
half-sine-wave superimposed on rated load
IFSM
240
(JEDEC method)
Forward Voltage per element
@ IF =10A
VFM
1.05
Peak Reverse Current
@TC = 25℃
10
IR
at Rated DC Blocking Voltage
@ TC = 125℃
500
I2t Rating for Fusing (t < 8.3ms) (Note 1)
I2t
240
Typical Junction Capacitance per Element (Note 2)
Cj
60
Typical Thermal Resistance, Junction to Case (Note 3)
R_JC
0.8
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Notes: 1. Non-repetitive, for t > 1ms and < 8.3 ms.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 1.6mm aluminum plate heat sink.
GBJ
Unit
2010
1000 V
700 V
A
A
V
μA
A2s
pF
℃/W
℃
http://www.yeashin.com
1
REV.02 20120305