BCX70J View Datasheet(PDF) - Continental Device India Limited
Part Name
Description
Manufacturer
BCX70J Datasheet PDF : 3 Pages
| |||
BCX70G BCX70H
BCX70J BCX70K
Collector current (d.c.)
Base current
Total power dissipation up to Tamb = 25 °C
Storage temperature
Junction temperature
IC
max. 200 mA
lB
max. 50 mA
Ptot max. 250 mW
Tstg –55 to +150 °C
Tj
max. 150 ° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a =
500 K/W
CHARACTERISTICS
Tamb: 25 °C unless otherwise specified
Collector–emitter cut–off current
VBE = 0; VCE = 45 V
VBE = 0; VCE = 45 V; Tamb = 150 °C
Emitter–base cut–off current
IC = 0; VEB = 4 V
Saturation voltages
at IC = 10 mA; IB = 0,25 mA
at IC = 50 mA; IB = 1,25 mA
Transition frequency at f = 100 MHz D
IC = 10 mA; VCE = 5 V
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10 V
Emitter capacitance at f = 1 MHz
IC = Ic = 0; VEB = 0,5 V
Noise figure at RS = 2 kW ,
IC = 200 mA; VCE = 5 V; f = 1 kHz; B = 200 Hz
ICES <
ICES <
20 nA
20 mA
IEB0 <
20 nA
VCEsat 0,05 to 0,35 V
VBEsat 0,6 to 0,85 V
VCEsat 0,1 to 0,55 V
VBEsat 0,7 to 1,05 V
>
125 MHz
fT
typ. 250 MHz
Cc
typ. 2,5 pF
Ce
typ.
typ.
F
<
8 pF
2 dB
6 dB
D.C. current gain
VCE = 5V; lC = 10mA
VCE = 5 V; IC = 2 mA
VCE = 1 V; IC = 50 mA
BCX70G 70H 70J 70K
hFE
>
hFE
>
<
hFE
>
— 40
120 180
220 310
50 70
30 100
250 380
460 630
90 100
Small-signal current gain
VCE = 5 V; IC = 2 mA; f = 1 kHz hfe
>
<
125 175
250 350
250 350
500 700
Output admittance
VCE = 5 V; IC = 2 mA; f = 1 kHz hoe
typ. 18 24
30 50 mS
Base-emitter voltage
VCE = 5 V; IC = 2 mA
VBE
typ.
0,55 to 0.75 V
0,65
V
VCE = 5 V; IC = 10 mA
VCE = 1 V; IC = 50 mA
VBE typ.
VBE typ.
0,52
V
0,78
V
Continental Device India Limited
Data Sheet
Page 2 of 3
Share Link: 