IDT7016L35G8 View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
Manufacturer
IDT7016L35G8 Datasheet PDF : 21 Pages
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IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Capacitance(1)
(TA = +25°C, f = 1.0mhz, for TQFP ONLY)
Symbol
Parameter
Conditions(2) Max. Unit
CIN Input Capacitance
VIN = 3dV
9 pF
COUT Output Capacitance
VOUT = 3dV
10 pF
NOTES:
3190 tbl 07
1. This parameter is determined by device characteristics but is not production tested.
2. 3dV references the interpolated capacitance when the input and output signals switch
from 0V to 3V or from 3V to 0V .
Military, Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range (VCC = 5.0V ± 10%)
7016S
7016L
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max. Unit
|ILI|
Input Leakage Current(1)
VCC = 5.5V, VIN = 0V to VCC
___
10
___
5
µA
|ILO|
Output Leakage Current
CE = VIH, VOUT = 0V to VCC
___
10
___
5
µA
VOL
Output Low Voltage
IOL = +4mA
___
0.4
___
0.4
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
3190 tbl 08
Output Loads and AC Test
Conditions
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1 and 2
3190 tbl 09
DATAOUT
BUSY
INT
347Ω
5V
893Ω
30pF
DATAOUT
347Ω
5V
893Ω
5pF*
Figure 1. AC Output Test Load
6.452
,
3190 drw 06
Figure 2. Output Test Load
(for tLZ, tHZ, tWZ, tOW)
*Including scope and jig.
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