IDT7016L12GGI View Datasheet(PDF) - Integrated Device Technology
Part Name
Description
Manufacturer
IDT7016L12GGI Datasheet PDF : 21 Pages
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IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
7016X12
Com'l Only
7016X15
Com'l Only
Symbol
Parameter
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
12
____
15
____
ns
tEW
Chip Enable to End-of-Write(3)
10
____
12
____
ns
tAW
Address Valid to End-of-Write
10
____
12
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
ns
tWP
Write Pulse Width
10
____
12
____
ns
tWR
Write Recovery Time
2
____
2
____
ns
tDW
Data Valid to End-of-Write
10
____
10
____
ns
tHZ
Output High-Z Time(1,2)
____
10
____
10
ns
tDH
Data Hold Time(4)
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
10
ns
tOW
Output Active from End-of-Write(1,2,4)
3
____
3
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
7016X20
Com'l, Ind
& Military
7016X25
Com'l &
Military
7016X35
Com'l &
Military
3190 tbl 13a
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max. Unit
WRITE CYCLE
tWC
Write Cycle Time
20
____
25
____
35
____
ns
tEW
Chip Enable to End-of-Write(3)
15
____
20
____
30
____
ns
tAW
Address Valid to End-of-Write
15
____
20
____
30
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
15
____
20
____
25
____
ns
tWR
Write Recovery Time
2
____
2
____
2
____
ns
tDW
Data Valid to End-of-Write
15
____
15
____
15
____
ns
tHZ
Output High-Z Time(1,2)
____
12
____
15
____
20
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
12
____
15
____
20
ns
tOW
Output Active from End-of-Write(1,2,4)
3
____
3
____
3
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
NOTES:
3190 tbl 13b
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage
and temperature, the actual tDH will always be smaller than the actual tOW.
5. 'X' in part numbers indicates power rating (S or L).
6.492
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