IRFPC60PBF View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

IRFPC60PBF

Power MOSFET

Vishay Semiconductors 

Power MOSFET

IRFPC60, SiHFPC60

Vishay Siliconix

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

600

VGS = 10 V

210

26

110

Single

0.40

D

TO-247AC

S

D

G

G

S

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247AC package is preferred for

commercial-industrial applications where higher power levels

preclude the use of TO-220AB devices. The TO-247AC is

similar but superior to the earlier TO-218 package because of

its isolated mounting hole. It also provides greater creepage

distance between pins to meet the requirements of most

safety specifications.

TO-247AC

IRFPC60PbF

SiHFPC60-E3

IRFPC60

SiHFPC60

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TC = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Mounting Torque

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 7.2 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).

c. ISD ≤ 16 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

LIMIT

600

± 20

16

10

64

2.2

1000

16

28

280

3.0

- 55 to + 150

300d

10

1.1

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

lbf · in

N·m

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91245

S11-0442-Rev. B, 14-Mar-11

www.vishay.com

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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