IRFPC50A View Datasheet(PDF) - Vishay Semiconductors

Part Name

Description

Manufacturer

IRFPC50A

Power MOSFET

Vishay Semiconductors 

IRFPC50A, SiHFPC50A

Vishay Siliconix

100000

10000

1000

100

VGS = 0V,

f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

10

Crss

1

1

10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25° C

0.1

0.2

VGS = 0 V

0.4 0.6 0.8 1.0 1.2 1.4 1.6

VSD ,Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = 13A

16

12

VDS = 480V

VDS = 300V

VDS = 120V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

20

40

60

80

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

10

100us

1ms

1

10ms

TC = 25°C

TJ = 150° C

Single Pulse

0.1

10

100

1000

1000

VDS , Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91241

S11-0443-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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