IRF634 View Datasheet(PDF) - New Jersey Semiconductor

Part Name

Description

Manufacturer

IRF634

N-Channel MOSFET Transistor

New Jersey Semiconductor 

N-Channel Mosfet Transistor

ELECTRICAL CHARACTERISTICS (TC=25°C)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA

VoS(TH) Gate Threshold Voltage

VDS= VGS; b= 0.25mA

RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=5.1A

loss

Gate Source Leakage Current

VGS= ±20V;VDs=0

loss

Zero Gate Voltage Drain Current

VDS= 250V; VGS= 0

VSD

Diode Forward Voltage

lF=8.1A;VGs=0

IRF634

MIN MAX UNIT

250

V

2

4

V

0.45

0

±100 nA

25

uA

2.0

V

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