STD4NB40 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD4NB40

N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK PowerMESH™ MOSFET

STMicroelectronics 

STD4NB40

STD4NB40-1

N-CHANNEL 400V - 1.47Ω - 4A DPAK/IPAK

PowerMESH™ MOSFET

TYPE

VDSS

RDS(on)

ID

STD4NB40

400 V < 1.8 Ω

4A

s TYPICAL RDS(on) = 1.47 Ω

s EXTREMELY HIGH dv/dt CAPABILITY

s 100% AVALANCHE TESTED

s GATE CHARGE MINIMIZED

s ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

3

1

DPAK

TO-252

3

2

1

IPAK

TO-251

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITH MODE POWER SUPPLIES (SMPS)

s DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuos) at TC = 25°C

ID

Drain Current (continuos) at TC = 100°C

IDM (q) Drain Current (pulsed)

PTOT

Total Dissipation at TC = 25°C

Derating Factor

dv/dt (1) Peak Diode Recovery voltage slope

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

June 2001

Value

400

400

± 30

4

2.52

16

60

0.47

4

–65 to 150

150

(1) ISD≤ 4A, di/dt≤200 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX

Unit

V

V

V

A

A

A

W

W/°C

V/ns

°C

°C

1/10

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