PDTA114TK(1998) View Datasheet(PDF) - Philips Electronics

Part Name

Description

Manufacturer

PDTA114TK
(Rev.:1998)

PNP resistor-equipped transistor

Philips Electronics 

Philips Semiconductors

PNP resistor-equipped transistor

Product specification

PDTA114TK

handboo6k,0h0alfpage

hFE

400

200

MBK784

(1)

(2)

(3)

−1

handbook, halfpage

VCEsat

(V)

−10−1

MBK783

(1)

(2)

(3)

0

−10−1

−1

−10

−102

IC (mA)

VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −40 °C.

Fig.3 DC current gain as a function of collector

current; typical values.

−10−−210−1

−1

−10

−102

IC (mA)

IC/IB = 10.

(1) Tamb = 100 °C.

(2) Tamb = 25 °C.

(3) Tamb = −40 °C.

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

1998 May 15

4

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