MTB10010U View Datasheet(PDF) - Philips Electronics
Part Name
Description
Manufacturer
MTB10010U Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN microwave power transistor
Product specification
MTB10010U
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb
Rth mb-h
Zth j-mb
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
thermal impedance from junction to mounting base
CONDITIONS
Tj = 100 °C
note 1
tp = 1 µs; δ = 1%;
note 1
Note
1. See “Mounting recommendations in the General part of handbook SC19a”.
MAX.
10.5
0.7
2.5
UNIT
K/W
K/W
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
ICES
collector cut-off current
IEBO
emitter cut-off current
CONDITIONS
VCB = 30 V; IE = 0
VCE = 30 V; RBE = 0
VEB = 1.5 V; IC = 0
MAX.
45
300
4.5
UNIT
µA
µA
µA
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C and working in pulsed conditions in a narrowband test circuit as shown in
Fig.4.
MODE OF
OPERATION
Class C
CONDITIONS
tp = 1 µs; δ = 1 %
f
(MHz)
1 030
VCC
(V)
24
PL
(W)
>9.5;
typ. 11
Gpo
(dB)
>9.5;
typ. 10
ηC
(%)
>50;
typ. 55
Zi/ZL
(Ω)
see Figs 5 and 6
List of components (see Fig.4)
COMPONENT
DESCRIPTION
L1
0.4 mm diameter copper wire
C1
tuning capacitor
C2
chip capacitor
C3
chip capacitor
C4
chip capacitor
C5
tantalum capacitor
C6
feedthrough bypass capacitor
C7
capacitor
VALUE
−
0.5 − 5 pF
3 pF
10 pF
47 pF
10 µF, 50 V
−
220 µF, 63 V
DIMENSIONS
rectangular loop
−
−
−
−
−
−
−
CATALOGUE NO.
−
Tekelec 5855
Eurofarad CEC 23
Eurofarad CEC 23
Eurofarad CEC 23
−
Erie 1250-003
−
1997 Feb 20
4
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