NXP Semiconductors
PEMH10; PUMH10
NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47k
12. Revision history
Table 10. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PEMH10_ PUMH10 v.3
Modifications:
20111220
Product data sheet
-
PEMH10_ PUMH10 v.2
• The format of this document has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Section 1 “Product profile”: updated
• Section 4 “Marking”: updated
• Table 7 “Thermal characteristics”: updated according to the latest measurements
• Table 8 “Characteristics”: ICEO updated according to the latest measurements, fT added,
Vi(off) redefined to VI(off) off-state input voltage, Vi(on) redefined to VI(on) on-state input
voltage.
• Figure 1 to 9: added
• Section 8 “Test information”: added
• Figure 10 and 11: replaced by minimized package outline drawings
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 13 “Legal information”: updated
PEMH10_ PUMH10 v.2 20031020
Product data sheet
-
PEMH10 v.1
PUMH10 v.1
PEMH10 v.1
20011022
Preliminary specification -
-
PUMH10 v.1
20000801
Product specification
-
PEMH10_PUMH10
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 20 December 2011
© NXP B.V. 2011. All rights reserved.
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