MCR08B View Datasheet(PDF) - Kersemi Electronic Co., Ltd.

Part Name

Description

Manufacturer

MCR08B

Sensitive Gate Silicon Controlled Rectifiers

Kersemi Electronic Co., Ltd. 

MCR08B, MCR08M

THERMAL CHARACTERISTICS

Characteristic

Symbol

Thermal Resistance, Junction to Ambient

PCB Mounted per Figure 1

RθJA

Thermal Resistance, Junction to Tab

Measured on Anode Tab Adjacent to Epoxy

RθJT

Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum)

TL

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Peak Repetitive Forward or Reverse Blocking Current(2)

(VAK = Rated VDRM or VRRM, RGK = 1000 Ω)

ON CHARACTERISTICS

Peak Forward On-State Voltage(1)

(IT = 1.0 A Peak)

Gate Trigger Current (Continuous dc)(3)

(VAK = 12 Vdc, RL = 100 Ω)

Holding Current(3)

(VAK = 12 Vdc, Initiating Current = 20 mA)

Gate Trigger Voltage (Continuous dc)(3)

(VAK = 12 Vdc, RL = 100 Ω)

DYNAMIC CHARACTERISTICS

TJ = 25°C

TJ = 110°C

IDRM, IRRM

—

—

VTM

—

IGT

—

IH

—

VGT

—

Critical Rate-of-Rise of Off State Voltage

(Vpk = Rated VDRM, TC = 110°C, RGK = 1000 Ω, Exponential Method)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) RGK = 1000 Ω is included in measurement.

(3) RGK is not included in measurement.

dv/dt

10

Value

156

25

260

Unit

°C/W

°C/W

°C

Typ Max Unit

—

10

µA

—

200

µA

—

1.7 Volts

—

200

µA

—

5.0

mA

—

0.8 Volts

—

—

V/µs

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