MCR08B View Datasheet(PDF) - Kersemi Electronic Co., Ltd.
Part Name
Description
Manufacturer
MCR08B Datasheet PDF : 9 Pages
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MCR08B, MCR08M
100
10
1.0
0.1
1.0
10000
5000
TJ = 25°C
1000
IGT = 48 µA
500
100
50
IGT = 7 µA
10
5.0
1.0
0.5
10
100
1000
10,000
RGK, GATE-CATHODE RESISTANCE (OHMS)
0.1
100,000 10
Vpk = 400 V
TJ = 25°
125°
110°
75°
100
1000
10,000
RGK, GATE-CATHODE RESISTANCE (OHMS)
50°
100,000
Figure 14. Holding Current Range versus
Gate-Cathode Resistance
Figure 15. Exponential Static dv/dt versus Junction
Temperature and Gate-Cathode Termination Resistance
10000
1000
500 400 V
100
300 V
200 V
100 V
TJ = 110°C
50 V
10000
1000
500
100
50
50
500 V
10
10
5.0
5.0
1.0
1.0
10
100
1000
10,000 0.01
RGK, GATE-CATHODE RESISTANCE (OHMS)
Figure 16. Exponential Static dv/dt versus Peak
Voltage and Gate-Cathode Termination Resistance
TJ = 110°C
400 V (PEAK)
RGK = 100
RGK = 1.0 k
RGK = 10 k
0.1
1.0
10
100
CGK, GATE-CATHODE CAPACITANCE (nF)
Figure 17. Exponential Static dv/dt versus
Gate-Cathode Capacitance and Resistance
10000
1000
500
100
50
10
IGT = 5 µA
5.0
IGT = 70 µA
IGT = 35 µA
1.0
IGT = 15 µA
10
100
1000
10,000
100,000
GATE-CATHODE RESISTANCE (OHMS)
Figure 18. Exponential Static dv/dt versus
Gate-Cathode Termination Resistance and
Product Trigger Current Sensitivity
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