MJ16010 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
MJ16010 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
MJ16010
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0
450
V
VCEsat-1
VCEsat-2
VBEsat
ICER
ICEV
IEBO
Collector-emitter saturation voltage IC=5A; IB=0.7A
Collector-emitter saturation voltage
Base-emitter saturation voltage
IC=10A ;IB=1.3A
TC=100℃
IC=10A ;IB=1.3A
TC=100℃
Collector cut-off current
VCE=850V;RBE=50Ω;TC=100℃
Collector cut-off current
VCE=850V; VBE(off)=1.5V
TC=100℃
Emitter cut-off current
VEB=6V; IC=0
2.5
V
3.0
3.0
V
1.5
1.5
V
2.5 mA
0.25
1.5
mA
10
mA
hFE
DC current gain
IC=15A ; VCE=5V
5
COB
Output capacitance
Switching times resistive load
VCB=10V,IE=0;f=1.0KHz
400
pF
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC=10A ; VCC=250V
IB1=1.3A ;IB2=2.6A
PW=30μs; RB2=1.6Ω
Duty Cycle≤2.0%
20
ns
200
ns
1200
ns
200
ns
2
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