FMB2907A View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FMB2907A Datasheet PDF : 7 Pages
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PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
60
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0
60
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
5.0
IB
Base Cutoff Current
VCB = 30 V, VEB = 0.5 V
ICEX
Collector Cutoff Current
VCE = 30 V, VBE = 0.5 V
ICBO
Collector Cutoff Current
VCB = 50 V, IE = 0
VCB = 50 V, IE = 0, TA = 125°C
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1 mA, VCE = 10 V
75
IC = 1.0 mA, VCE = 10 V
100
IC = 10 mA, VCE = 10 V
100
IC = 150 mA, VCE = 10 V*
100
IC = 500 mA, VCE = 10 V*
50
VCE(sat)
Collector-Emitter Saturation Voltage* IC = 150 mA, IB = 15 mA
IC = 500 mA, IB = 50 mA
VBE(sat)
Base-Emitter Saturation Voltage
IC = 150 mA, IB = 15 mA*
IC = 500 mA, IB = 50 mA
V
V
V
50
nA
50
nA
0.02 µA
20
µA
300
0.4
V
1.6
V
1.3
V
2.6
V
SMALL SIGNAL CHARACTERISTICS
fT
Current Gain - Bandwidth Product
Cobo
Output Capacitance
Cibo
Input Capacitance
IC = 50 mA, VCE = 20 V,
f = 100 MHz
VCB = 10 V, IE = 0,
f = 100 kHz
VEB = 2.0 V, IC = 0,
f = 100 kHz
250
MHz
6.0
pF
12
pF
SWITCHING CHARACTERISTICS
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VCC = 30 V, IC = 150 mA,
IB1 = 15 mA
VCC = 6.0 V, IC = 150 mA
IB1 = IB2 = 15 mA
30
ns
8.0
ns
20
ns
80
ns
60
ns
20
ns
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
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