FMB100 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

FMB100

NPN Multi-Chip General Purpose Amplifier

Fairchild Semiconductor 

NPN Multi-Chip General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA= 25°C unless otherwise noted

Test Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVCBO

Collector-Base Breakdown Voltage

BVCEO

BVEBO

Collector-Emitter Breakdown

Voltage*

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 10 µA, IB = 0

IC = 1 mA, IE = 0

IE = 10 µA, IC = 0

VCB = 60 V

VCE = 40 V

VEB = 4 V

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

VBE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = 100 µA, VCE = 1.0 V

IC = 10 mA, VCE = 1.0 V

IC = 100 mA, VCE = 1.0 V*

IC = 150 mA, VCE = 5.0 V*

IC = 10 mA, IB = 1.0 mA

IC = 200 mA, IB = 20 mA*

IC = 10 mA, IB = 1.0 mA

IC = 200 mA, IB = 20 mA*

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

NF

Current Gain - Bandwidth Product

Output Capacitance

Noise Figure

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

VCE = 20 V, IC = 20 mA

VCB = 5.0 V, f = 1.0 MHz

IC = 100 µA, VCE = 5.0 V,

RG = 2.0 kΩ, f = 1.0 kHz

75

V

45

V

6.0

V

50

nA

50

nA

50

nA

80

100

450

100

100

350

0.2

V

0.4

V

0.85 V

1.0

V

300

MHz

3.5

pF

2.5

dB

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

400

125 °C

300

Vce = 5V

25 °C

200

- 40 °C

100

0

10

20 30 50

100

200 300 500

I C - COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

0.4

β = 10

0.3

25 °C

0.2

0.1

125 °C

- 40 °C

1

10

100

400

I C - COLLECTOR CURRENT (mA)

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