BC635(2000) View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BC635 Datasheet PDF : 4 Pages
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BC635, BC637, BC639,
BC639-16
High Current Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC635
BC637
BC639
Collector-Base Voltage
BC635
BC637
BC639
Emitter-Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RθJA
RθJC
Value
Unit
Vdc
45
60
80
Vdc
45
60
80
5.0
Vdc
1.0
Adc
625
mW
5.0
mW/°C
800
12
–55 to
+150
mW
mW/°C
°C
Max
Unit
200
°C/W
83.3
°C/W
http://onsemi.com
COLLECTOR
2
3
BASE
1
EMITTER
1
23
TO–92 (TO–226AA)
CASE 29
STYLE 14
ORDERING INFORMATION
Device
Package
Shipping
BC635RL1
TO–92
2000/Tape & Reel
BC635ZL1
TO–92
2000/Ammo Pack
BC637
BC639
TO–92
TO–92
5000 Units/Box
5000 Units/Box
BC639RL1
TO–92
2000/Tape & Reel
BC639ZL1
TO–92
2000/Ammo Pack
BC639–16ZL1 TO–92
2000/Ammo Pack
© Semiconductor Components Industries, LLC, 2001
1
June, 2000 – Rev. 3
Publication Order Number:
BC635/D
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