BC635(2000) View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC635
(Rev.:2000)

High Current Transistors

ON Semiconductor 

BC635, BC637, BC639, BC639–16

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (1)

(IC = 10 mAdc, IB = 0)

BC635

BC637

BC639

V(BR)CEO

45

—

60

—

80

—

Collector–Emitter Zero–Gate Breakdown Voltage (1)

V(BR)CES

(IC = 100 mAdc, IB = 0)

BC639–16

120

—

Collector–Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

BC635

BC637

BC639

V(BR)CBO

45

—

60

—

80

—

Emitter–Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

5.0

—

Collector Cutoff Current

(VCB = 30 Vdc, IE = 0)

(VCB = 30 Vdc, IE = 0, TA = 125°C)

ON CHARACTERISTICS (1)

ICBO

—

—

—

—

DC Current Gain

(IC = 5.0 mAdc, VCE = 2.0 Vdc)

(IC = 150 mAdc, VCE = 2.0 Vdc)

(IC = 500 mA, VCE = 2.0 V)

hFE

25

—

BC635

40

—

BC637

40

—

BC639

40

—

BC639–16ZLT1

100

—

25

—

Collector–Emitter Saturation Voltage

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat)

—

—

Base–Emitter On Voltage

(IC = 500 mAdc, VCE = 2.0 Vdc)

VBE(on)

—

—

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)

fT

—

200

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

7.0

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cib

—

50

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

Max

Unit

Vdc

—

—

—

Vdc

—

Vdc

—

—

—

—

Vdc

100

nAdc

10

µAdc

—

—

250

160

160

250

—

0.5

Vdc

1.0

Vdc

—

MHz

—

pF

—

pF

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