BC635 View Datasheet(PDF) - ON Semiconductor
Part Name
Description
Manufacturer
BC635 Datasheet PDF : 4 Pages
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BC635, BC637, BC639, BC639−16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (1)
(IC = 10 mAdc, IB = 0)
BC635
BC637
BC639
V(BR)CEO
45
−
60
−
80
−
Collector − Emitter Zero−Gate Breakdown Voltage (1)
V(BR)CES
(IC = 100 mAdc, IB = 0)
BC639−16
120
−
Collector − Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
BC635
BC637
BC639
V(BR)CBO
45
−
60
−
80
−
Emitter − Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (Note 1)
V(BR)EBO
5.0
−
ICBO
−
−
−
−
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
(IC = 500 mA, VCE = 2.0 V)
hFE
25
−
BC635
40
−
BC637
40
−
BC639
40
−
BC639−16ZLT1
100
−
25
−
Collector − Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
Base − Emitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
VCE(sat)
−
−
VBE(on)
−
−
Current − Gain − Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
fT
−
200
Cob
−
7.0
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
−
50
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2.0%.
Max
Unit
Vdc
−
−
−
Vdc
−
Vdc
−
−
−
−
Vdc
100
nAdc
10
mAdc
−
−
250
160
160
250
−
0.5
Vdc
1.0
Vdc
−
MHz
−
pF
−
pF
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