BC635 View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

BC635

High Current Transistors

ON Semiconductor 

BC637, BC639, BC639−16

1000

500

SOA = 1S

200 PD TA 25°C

100

50

PD TC 25°C

20

10

5

PD TA 25°C

2

PD TC 25°C

1

BC635

BC637

BC639

1

2 3 4 5 7 10

20 30 40 50 70 100

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Active Region Safe Operating Area

500

VCE = 2 V

200

100

50

20

1

3 5 10

30 50 100

300 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 2. DC Current Gain

500

300

VCE = 2 V

100

50

20

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 3. Current−Gain — Bandwidth Product

1

0.8

VBE(sat) @ IC/IB = 10

0.6

VBE(on) @ VCE = 2 V

0.4

0.2

VCE(sat) @ IC/IB = 10

0

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 4. “Saturation” and “On” Voltages

-0.2

-1.0

-1.6

-2.2

1

VCE = 2 VOLTS

DT = 0°C to +100°C

qV for VBE

3 5 10

30 50 100 300 500 1000

IC, COLLECTOR CURRENT (mA)

Figure 5. Temperature Coefficients

http://onsemi.com

3

Share Link: