SSD2007A View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

SSD2007A

Dual N-CHANNEL POWER MOSFET

Fairchild Semiconductor 

Dual N-CHANNEL POWER MOSFET

FEATURES

! Extremely Lower RDS(ON)

! Improved Inductive Ruggedness

! Fast Switching Times

! Rugged Polysilicon Gate Cell Structure

! Low Input Capacitance

! Extended Safe Operating Area

! Improved High Temperature Reliability

! Surface Mounding Package : 8SOP

SSD2007A

8 SOP

S1 1

G1 2

S2 3

G2 4

Top View

8 D1

7 D1

6 D2

5 D2

D1,D2

D1,D2

G1 ,G2

▼

S1 ,S2

N-Channel MOSFET

Absolute Maximum Ratings

Symbol

VDSS

VDGR

VGS

ID

ID

IDM

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage(1)

Drain-Gate Voltage(RGS=1.0MΩ)(1)

Gate-to-Source Voltage

Continuous Drain Current TA=25℃

Continuous Drain Current TA=100℃

Drain Current-Pulsed (2)

Total Power Dissipation TA=25℃

TA=70℃

Operating and Storage

Junction Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/16” from case for 5 seconds

Value

50

50

±20

2.0

1.6

8.0

2.0

1.3

- 55 to +150

300

Notes ;

(1) TJ= 25℃ to 150℃

(2) Repetitive Rating : Pulse Width Limited by Max. Junction Temperature

Units

V

V

V

A

A

V

W

℃

Rev. A

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