MJW21191 View Datasheet(PDF) - New Jersey Semiconductor
Part Name
Description
Manufacturer
MJW21191 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 10mA; IB=0
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= 4A; ls= 0.4A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc= 8A; IB= 1 .6A
VsE(on) Base-Emitter On Voltage
lc= 4A; VCE= 2V
ICES
Collector Cutoff Current
VCB= 250V; IE= 0
IEBO
Emitter Cutoff Current .
VEB= 5V; lc= 0
hFE-1
DC Current Gain
lc= 4A ; VCE= 2V
hFE-2
DC Current Gain
lc= 8A ; VCE= 2V
fl
Current-Gain—Bandwidth Product
lE=1A;VCE=10V
MJW21191
MIN TYP. MAX UNIT
150
V
1.0
V
2.0
V
2.0
V
10
uA
10
uA
15
100
5.0
4
MHz
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