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DCR3030V40 View Datasheet(PDF) - Dynex Semiconductor

Part Name
Description
Manufacturer
DCR3030V40
Dynex
Dynex Semiconductor Dynex
DCR3030V40 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS) RMS value
IT
Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
DCR3030V42
Max. Units
3030
A
4760
A
4550
A
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
40.6
8.24
Units
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Min.
Max. Units
Rth(j-c)
Thermal resistance junction to case Double side cooled
Single side cooled
Rth(c-h)
Tvj
Tstg
Fm
Thermal resistance case to heatsink Clamping force 54kN
(with mounting compound)
Virtual junction temperature
(blocking)
Storage temperature range
Clamping force
DC
Anode DC
Cathode DC
Double side
Single side
-
-
-
-
-
-
-55
48.0
0.00746 °C/W
0.0130 °C/W
0.0178 °C/W
0.002 °C/W
0.004 °C/W
125
°C
125
°C
59.0
kN
2/10
www.dynexsemi.com

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