DCR3030V40 View Datasheet(PDF) - Dynex Semiconductor

Part Name

Description

Manufacturer

DCR3030V40

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

Gate trigger voltage

VGD

Gate non-trigger voltage

IGT

Gate trigger current

IGD

Gate non-trigger current

Test Conditions

VDRM = 5V, Tcase = 25°C

At VDRM, Tcase = 125°C

VDRM = 5V, Tcase = 25°C

VDRM = 5V, Tcase = 25°C

DCR3030V42

Max. Units

1.5

V

TBD

V

250 mA

TBD mA

CURVES

7000

6000

5000

min 125°C

max 125°C

25°C

max 25°C

4000

3000

2000

1000

0

0.5

1.0

1.5

2.0

2.5

Instantaneous on-state voltage VT - (V)

Fig.2 Maximum & minimum on-state characteristics

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D.IT

Where A = 0.866995

B = -0.042053

C = 0.000100

D = 0.014062

these values are valid for Tj = 125°C for IT 500A to 10000A

4/10

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