DCR3030V30 View Datasheet(PDF) - Dynex Semiconductor
Part Name
Description
Manufacturer
DCR3030V30 Datasheet PDF : 10 Pages
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SEMICONDUCTOR
DCR3030V42
130
120
d.c.
180
110
120
100
90
90
60
80
30
70
60
50
40
30
20
10
0
0
2000
4000
6000
8000
Mean on-state current, IT(AV) - (A)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
d.c.
180
120
90
60
30
1000 2000 3000 4000 5000 6000
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
20
18
Double Side
16
Cooling
Anode Side
14
Cooling
Cathode
12
Sided Cooling
10
8
6
4
2
0
0.001 0.01
0.1
1
Time ( s )
10
100
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
Anode side cooled
Cathode side cooled
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
Ri (°C/kW)
Ti (s)
1
0.9206
0.0076807
0.9032
0.0075871
0.9478
0.0078442
2
1.8299
0.0579454
1.6719
0.0536531
2.0661
0.0645541
3
3.4022
0.4078613
3.0101
0.3144537
1.6884
0.3894389
4
1.3044
1.2085
7.4269
5.624
13.0847
4.1447
Zth = [Ri x ( 1-exp. (t/ti))]
[1]
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
Double side cooling
Zth (z)
°
sine.
rect.
180
1.34
0.88
120
1.57
1.30
90
1.83
1.54
60
2.08
1.81
30
2.27
2.11
15
2.36
2.28
Anode Side Cooling
Zth (z)
°
sine.
rect.
180 1.34
0.88
120 1.57
1.30
90 1.84
1.54
60 2.08
1.81
30 2.28
2.11
15 2.37
2.28
Cathode Sided Cooling
Zth (z)
° sine.
180 1.33
rect.
0.88
120 1.57
1.29
90 1.83
1.53
60 2.07
1.80
30 2.26
2.10
15 2.35
2.26
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
6/10
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