D1545 View Datasheet(PDF) - Inchange Semiconductor

Part Name

Description

Manufacturer

D1545

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

Silicon NPN Power Transistor

Product Specification

2SD1545

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 4.0A; IB= 0.8A

ICBO

Collector Cutoff Current

VCB= 500V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V ; IC= 0

hFE

DC Current Gain

IC= 1A ; VCE= 5V

fT

Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V

COB

Output Capacitance

IE= 0 ; VCB= 10V;ftest= 1.0MHz

tf

Fall Time

ICP= 4A , IB1(end)= 0.8A

5.0

V

1.5

V

10 μA

1.0 mA

8

3

MHz

165

pF

0.5 1.0 μs

2

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